NVMe 1TB Samsung MZ-VLB1T00

EGP 6,000.00

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Model
Manufacturer: Samsung
Manufacturer Part:MZ-VLB1T00
Performance
Product Type: Internal Solid State Drive
Form Factor: M.2 2280
Capacity: 1TB
Flash Memory Technology Triple Level Cell (TLC)
Random Read IOPS: 380000
Random Write IOPS: 360000
MTBF 1500000 Hour(s)
Drive Interface Type: PCI Express 3.0 x4
Condition: Used
code:

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